A semiconductor nanolaser has been created with an emission line width 5 to 10 times narrower than that of standard counterparts. The transverse size of the active region does not exceed 60 nanometers, while the emission band is a record 0.15 nanometers, TASS reports, citing the press service of Saint Petersburg State University (SPbSU).
The design is based on threadlike indium gallium nitride (InGaN) nanocrystals grown by molecular beam epitaxy on a metal-dielectric substrate. The achieved spectral purity required perfectly smooth surfaces and a uniform active medium free of parasitic impurities.
The work involved specialists from Alferov University, the Higher School of Economics (HSE) in St. Petersburg, LETI and MIPT, as well as a group of foreign researchers.
Such localization of light on the nanometer scale opens the way to the creation of ultrasensitive biochemical sensors, super-resolution microscopy systems, and key elements of photonic integrated circuits. It is fundamentally important that the technology based on nitride nanocrystals is scalable across a wide spectral range — from "disinfecting" ultraviolet to the telecommunications infrared channel. Under sanctions-related restrictions on the supply of precision optics, this gives Russian developers their own tool for assembling next-generation optical chips.
Earlier, www1.ru reported that Russian scientists had developed a nanolaser that operates in the blue part of the spectrum. Its dimensions are only 150 to 190 nanometers, meaning it is comparable in size to viral particles.
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