Researchers from Novosibirsk State University have created innovative materials that could form the basis for developing advanced memory devices of the future. These devices will surpass flash memory in terms of rewrite cycles, memory capacity, and operating speed, according to NSU.
The university explained that technologies have now reached a level where everything possible has already been squeezed out of flash memory. Maximum indicators have been achieved in terms of the number of rewrite cycles, duration of use, and memory capacity per element. Further multiple increases in these parameters using existing technologies are impossible.
A new type of memory, like a memristor, can help overcome these limitations. There are other types of memory, but it is the memristor that stands out because its application can increase the number of rewrite cycles by orders of magnitude compared to flash memory...
He also noted that there are scientific papers in which the authors demonstrate that the process of rewriting data in memristors is much faster than in flash memory. If the rewrite cycle for flash memory takes fractions of microseconds, then in the case of memristors, we are talking about tens of nanoseconds or even picoseconds.
Novosibirsk State University explained that silicon oxide is one of the most common insulators used in the production of various electronic components.
Silicon-germanium glasses are a mixture of silicon and germanium oxides. Previously, scientists studied the properties of these substances separately.
However, Siberian researchers decided to combine the properties of silicon and germanium and, for the first time in the world, discovered a memristor effect, also known as the "memory effect," in these materials. They also studied their optoelectronic properties and are now investigating the processes occurring in these materials when an electric current flows through them.
No one but us has yet researched germano-silicate glasses with this composition, and we would like to obtain from this material modern memory elements that would surpass the familiar flash memory (Flash USB drive) in terms of the number of rewrite cycles, durability, efficiency, and reliability.
The importance of the study lies in the fact that its results allow scientists to theoretically determine the characteristics of a memristor without the need to grow its nanostructure.
Earlier, Russian scientists developed a module that can identify users by theirunique keyboard handwriting. This module is aimed at increasing the level of security of access to information systems of enterprises.
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