Russian scientists from MIREA have developed diamond field-effect transistors capable of operating effectively in high-temperature and radiation conditions.
The created devices surpass silicon analogs by 10–15% in performance and resistance to extreme conditions. The basis of the transistor is a layer of diamond less than one micron thick, obtained by thermochemical treatment, which eliminates surface defects. Unlike silicon, diamond does not lose conductivity when heated, but rather increases it. This makes such transistors particularly promising for use in reactive, nuclear, and industrial electronics.
The development opens the way for creating "smart" engines with built-in electronics, and can also be used in radar, satellite communications, deep-sea drilling, and medical technology. The key advantage of the technology is the combination of heat resistance, energy efficiency, and radiation resistance.
The new transistors will increase the reliability of equipment, reduce maintenance costs, and make it possible to use electronics in places previously considered inaccessible.
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New technology for the production of transistors for flexible electronics created at TPU
New technology for the production of transistors for flexible electronics created at TPU
