At Tomsk Polytechnic University (TPU), in collaboration with foreign colleagues, a promising natural material for photoelectronics has been discovered for the first time. It demonstrated a good photoresponse even at low light intensity, according to the university's press service.
Scientists have found that when arsenic disulfide is exposed to weak light, it strongly changes its electronic properties, but does not start to conduct electric current.
When light is applied to a two-dimensional material, a redistribution of charges occurs. As a result, the surface electrical potential increases to 80 mV.
The discovered properties of the material make it promising for the development of new generation phototransistors and optical switches. Scientists plan to study the properties of other ultrathin layers of minerals mined in Russia.
Earlier, www1.ru reported that in Kazan, a new material for new generation batteries was proposed.
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