At the Institute of Automation and Control Processes of the Far Eastern Branch of the Russian Academy of Sciences, a new method has been developed for creating silicon photodetectors sensitive to polarized light. The new technology can be used in medicine and optoelectronics. This was reported by the press service of the Russian Science Foundation.
Scientists tested silicon photodetectors by directing light (green, yellow, orange, red, and infrared) of different wavelengths (from 500 to 1600 nanometers) at them. The results showed that the photodetectors are able to distinguish the polarization of light in the range from 700 to 1100 nanometers (corresponding to the red and infrared spectra). The efficiency of capturing incident light was 100%.
The proposed technology can be used to create high-contrast photodetectors for working with medical and biological preparations and tissues. Also, using this approach, a conventional silicon photodetector can be adapted to work in fiber optic communication lines that provide an Internet connection.
The new technology does not require expensive equipment or toxic chemicals. This simplifies its introduction into industrial production.
Earlier www1.ru reported that Russia developed a new material for optoelectronic devices in the near-IR range on silicon.
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