Physicists from UNN named after N. I. Lobachevsky have developed a unique type of qubits based on artificial atoms that can maintain a quantum state longer than usual. This discovery paves the way for creating more stable and manageable quantum devices in Russia.
Researchers in the country have for the first time learned to control two qubit parameters at once — charge and rotational moment (spin). This dual control allows for building more complex, but compact quantum systems.
Using an electric field, we control both the charge and the rotation vector of the qubit, which makes it possible to create more complex, but miniature quantum systems.
Scientists have discovered an unexpected effect — spin memory in hybrid qubits. They learned to "lock" the qubit at a certain energy level, which allows the quantum state of the particle to be maintained longer than usual. This is a breakthrough in creating non-volatile, electrically controlled quantum memory elements.
Any system strives for minimum energy, particles move to ever lower levels, so fixing the required qubit values for a long time is almost impossible, but we succeeded. In a variable electric field, we held the qubit in the state we needed.
The system is based on gallium arsenide, a common semiconductor material with well-studied properties. This will allow scaling the development in the future and integrating it into various types of quantum devices.
The scientists' immediate plans include studying the spin memory effect, optimizing quantum operations in hybrid spin-charge qubit registers, and developing quantum error correction methods. All this is necessary to create full-fledged quantum processors.
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