Новую технологию для создания сверхтонких проводов для микроэлектроники создали в МИСИС и «Курчатовском институте»

Scientists have improved a method that improves the properties of alloys and reduces material costs

Scientists from NUST MISIS and NRC "Kurchatov Institute" have developed a new method for producing ultra-thin wires that can be used in microelectronics. The technology allows precise adjustment of the composition of alloys without the need to select electrolytes, which makes the process more predictable and economical.

Modern devices require materials with specific properties. Researchers have proposed an alloy of three metals: iron, cobalt or nickel and copper. This composition provides strong magnetism and a rapid response to external changes.

Rector of NUST MISIS, Alevtina Chernikova, noted that the creation of new materials is one of the main tasks of the university. Professor Larisa Panina and her team are working on functional magnetic wires for various applications, including medicine and electronics.

The method of depositing metal atoms through polymer matrices allows the formation of threads that are a thousand times thinner than a human hair. By changing the voltage, scientists can regulate the composition of alloys, which affects their magnetic properties.

Studies have shown that the addition of copper increases the alloy's resistance to demagnetization. For example, wires made of iron and cobalt with 6% copper retained magnetization when exposed to 370 oersteds, which is better than traditional alloys.

Professor Panina added that changing the voltage allows you to control not only the amount of copper, but also the ratio between iron and magnetic metals, which is important for creating wires with the desired characteristics.

Read more on the topic:

Powerful magnet without rare earth elements will be developed at MISIS

Technology for the production of ceramic forums improved at MISIS

Production of parts for aircraft engines in Russia has begun from powder materials: the "Kurchatov Institute" participated in the development of the technology

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