Novosibirsk State University (NSU) has applied a new technology for creating nanostructures for the production of semiconductors. It is distinguished by high efficiency in processing the surface of materials with minimal damage to their structure. This was reported by the press service of the Ministry of Education and Science of the Russian Federation.
To obtain nanostructures, specialists used gas-jet ion-cluster beams. This approach is more effective than the pulsed method. It allows for high-quality formation, polishing, and spraying of nanostructures.
For more uniform surface treatment, we moved the sample in one direction, and for more effective formation of nanostructures, the beam fell on its surface at an angle of 60 degrees - which we recognized as optimal. During the research, we noticed a pattern: the more atoms fall on the sample at such an angle, the higher and wider the waves on its surface become.
The wave-like structure provides better conductivity of the material for its future application. Nanostructures are in demand for use in plasmonics, telecommunications, optoelectronics, electronic engineering, solar energy, the creation of highly sensitive sensors, and in other fields.
Earlier, www1.ru reported that Russia developed a new material for optoelectronic devices in the near-IR range on silicon.
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