Russian engineers have developed a technological platform for integrating memristor devices (electrically programmable analog memory elements with a threshold resistive switching character - editor's note www1.ru) into the production of silicon chips. Thanks to this, the country will be able to create RRAM memristor memory, the National Center for Physics and Mathematics (NCPM) said.
The center's press service explained that it is about the topology of an integrated circuit for the production of a prototype RRAM non-volatile memory chip by combining traditional silicon technology and NCPM technologies. Scientists have found a way to use the upper metallization layers in silicon microchips to place memristors (resistors with a memory effect) in them.
It is specified that memristors are also necessary for the development of artificial analogues of nerve endings. Memristor memory combines the properties of flash memory and RAM and is important for the development of microelectronics.
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