The Russian group of companies "Element", a leading developer and manufacturer of microelectronics, will invest 4.4 billion rubles in the production of gallium nitride (GaN) power transistors. The project will be implemented at the Research Institute of Electronic Technology (NIIET) in Voronezh, one of the group's key enterprises.
A representative of the "Element" company noted that the project will expand NIIET's capabilities in the assembly of microwave and power GaN transistors: the production of gallium nitride crystals will be launched. This will make NIIET the first enterprise in Russia with a full cycle of GaN transistor production.
Gallium nitride is an advanced semiconductor material. Its unique properties allow the creation of transistors that operate at higher temperatures and frequencies, with increased power density and energy efficiency compared to silicon analogs. This makes it ideal for use in power supplies, including server power supplies, as well as in microwave devices, such as radio signal amplifier modules in telecommunications.
The new production facility will be able to produce 5.5 thousand 200-millimeter wafers per year.
The project is financed on preferential terms through the cluster investment platform (CIP). A representative of the "Element" company explained the choice of NIIET for the placement of crystal production by the enterprise's experience in the serial production of power devices based on gallium nitride.
Earlier www1.ru reported that GS Nanotech successfully tested the first domestic mold compound — a material for sealing and protecting microcircuits. It was developed in cooperation with MIET, JSC "Institute of Plastics" and other scientific institutions.
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