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Centr kompetenciy NTI «Fotonika»

Russia has developed a new material for near-IR optoelectronic devices based on silicon
09 Mar 2024 16:58
Russia has developed a new material for near-IR optoelectronic devices based on silicon

The solution is more than five times cheaper than its counterparts

NewsScienceIndustryCentr kompetenciy NTI «Fotonika»Alferovskiy Universitet
Eva Konstantinova
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