Semiconductors to be Grown on the ISS: Russian "Ekran-M" Experiment Launched

No similar studies have been conducted in the world before

The unique scientific equipment "Ekran-M" has been installed on the International Space Station (ISS). The equipment was developed at the A.V. Rzhanov Institute of Semiconductor Physics SB RAS.

"Ekran-M" was placed on the outer surface of the ISS by Russian cosmonauts Sergei Ryzhikov and Alexei Zubritsky with the support of Oleg Platonov.

The "Ekran-M" equipment will allow the creation of semiconductor multilayer materials in space vacuum using molecular beam epitaxy.

The experiment focuses on the technology of creating ultra-pure gallium arsenide films — a key material for the production of solar batteries and in microelectronics. The "Ekran-M" installation was delivered to orbit in September 2025 by the Progress MS-32 cargo ship.

No similar studies are being conducted anywhere else in the world.

Read more materials on the topic: