Tomsk Polytechnic University (TPU) has developed a new technology for creating flexible transistors with an electrolytic gate. This was reported in the press service of the Ministry of Education and Science of the Russian Federation.
The basis of the new technology is composites based on reduced graphene oxide and a thermoplastic polymer. These materials are a sheet of polymer, into the upper layer of which a conductive layer of reduced graphene oxide is integrated.
Studies have shown that using controlled oxidation and reduction reactions of graphene oxide, we can change the electrochemical properties of the composite in an electrolyte solution, that is, make it more or less conductive. This technology can form the basis for creating flexible transistors with an electrolytic gate.
Scientists have discovered that the properties of this composite material can be adjusted by subjecting it to electrochemical treatment. As a result, the thermoplastic polymer on the surface is destroyed and provides access to the electroactive reduced graphene oxide. This will allow the creation of transistors with an electric gate.
A transistor with an electrolytic gate is just one, but a very important element of biosensors. They are used to detect ions and biomolecules. For example, proteins, antibodies, ions in fluids such as saliva and blood, and even for brain research.
Earlier, www1.ru reported that Russia will for the first time launch the production of power diode and transistor crystals based on silicon and silicon carbide.
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