Specialists from the P. N. Lebedev Physical Institute (FIAN) have developed an installation for producing domestic components of X-ray and diffraction optics, based on an electronic nanolithographer that ceased production after the collapse of the Soviet Union. This was announced by Andrey Naumov, Vice President of the International Commission for Optics (ICO) and Corresponding Member of the Russian Academy of Sciences.
As a basis for the installation, we took the ZBA electronic nanolithographer, developed in the 1980s and 1990s by a consortium of countries of the Council for Mutual Economic Assistance (CMEA). Several hundred such installations operated in the USSR, CMEA countries, and the post-Soviet space, and a significant part of all late Soviet and post-Soviet electronics was manufactured using these machines, which, after the collapse of the Soviet Union, ceased to be produced for political reasons. In addition to the reengineering of individual components of the installation, they have been redesigned taking into account modern technologies.
With the help of the new installation, Russian scientists have already begun to obtain elements of spectrometers and components for the manufacture of diffraction optical elements and phase gratings. They are used in machine vision and microscopy systems.
Recently, specially calculated grazing incidence diffraction gratings with a variable period were manufactured, the use of which is fundamental for the development of X-ray optics. We also obtained high-quality diffraction gratings for spectrometers. The possibility of printing on large plates up to 150 by 150 mm has been implemented.
The installation uses the method of electron beam lithography. It involves the use of an electron beam to structure the surface of a special polymer material (resist). This approach allows the production of unique nanostructures with a technological standard of up to 200 nanometers or less.
Earlier www1.ru reported that the first Russian lithographer at 350 nanometers came out for testing.
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