Scientists from the A.V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences have developed a technology for creating long-term flash memory chips resistant to cosmic radiation. This was reported by CNews. The development is intended for orbital data centers, space supercomputers, and interplanetary spacecraft.
How it works
Classical flash memory is built on silicon transistors with a floating gate. Later solutions use “traps” — structural defects in silicon nitride dielectric films. They capture electrons and hold them motionless. At room temperature, the lifetime of such electrons reaches hundreds of years, which ensures long-term data storage.
The institute's scientists proposed and patented devices based on such films. Then they moved on to materials with high dielectric permittivity — aluminum or zirconium oxides. This solution is also protected by a patent. It increases information storage time, reduces energy consumption during rewriting, and enhances radiation resistance.
Where it will be applied
According to Vladimir Gritsenko, chief researcher at the ISP SB RAS, radiation-resistant non-volatile memory will find application in orbital data centers and space supercomputers. Satellites generate large volumes of data, the transmission of which to Earth requires significant resources. It is advisable to store and process some of the information directly in space.
The technology is also promising for systems with a nuclear power source — spacecraft with nuclear engines and atomic stations on other planets. At the same time, experts note the need for parallel development of radiation-resistant processors, which currently remain the weak link in such complexes.
What's next
Serial production requires investments in the construction and modernization of factories, proprietary lithographic equipment for 65 nm and below, ultra-pure gases and chemicals. Personnel training and long-term state support are no less important.
In addition to flash memory, the institute is working on information carriers based on other physical principles. Instead of charged “traps,” atomic displacement is used, which changes the resistance or polarization of the medium. Such devices are capable of operating millions of times faster than modern chips and can withstand trillions of rewrite cycles.