Engineers from Tomsk State University of Control Systems and Radioelectronics (TUSUR) have for the first time assembled a complete set of four silicon microwave integrated circuits for radar transceivers. Previously, similar components for such equipment in Russia were mainly purchased from abroad.
TUSUR scientists have created a low-noise amplifier, a digital attenuator, a phase shifter, and a buffer amplifier. All four circuits were manufactured using domestic 180-nm silicon CMOS technology.
Their detailed testing on complex measuring equipment confirmed compliance with both simulation results and technical requirements. After minor modifications, small batches can be produced according to enterprise orders.
Such chips can be used in airfield radars, communication systems, and equipment for drones. Compared to gallium arsenide solutions, silicon circuits allow for reduced power consumption, size, and cost of devices.
The next step will be to combine the functions of several microcircuits on a single chip. TUSUR expects to create a domestic microwave receiver for S-band AFAR transceiver modules.
Earlier, in the Sverdlovsk region, a tender for the construction of the Karats solid-state microwave electronics factory was successfully completed. All work will be finished in 2027, and the initial cost of the project was estimated at 2.4 billion rubles.