Scientists from Alferov University (St. Petersburg), in collaboration with partners — JSC "OKB-Planeta" and LLC "Ioffe-LED" — have developed and patented Russia's first near-infrared (IR) photodiodes with sensitivity to the electromagnetic spectrum. The new sensors are capable of detecting radiation in the range up to 2.65 μm, which is almost twice as wide as that of existing Russian analogues.
The key achievement was the improvement of the composition of indium-gallium arsenide (InGaAs) — a semiconductor used in infrared sensors. Previously, such sensors operated within 0.9–1.7 microns, but by increasing the proportion of indium in the crystals, it was possible to expand their sensitivity.
We have developed a technology that allows us to create InGaAs crystals with a record indium content. This not only significantly expands the operating range of detectors, but also maintains their compatibility with existing production processes. Thanks to this, our developments can quickly enter the market and compete with foreign analogues.
The new photodiodes can be used in:
- Night vision devices — improved image detail even in conditions of high humidity or cloud cover.
- Gas analyzers — accurate measurement of methane and CO₂ concentration, which is important for environmental monitoring.
The development was supported by the Russian Science Foundation (RSF) and the Foundation for Assistance to Innovations.
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