Researchers from MIPT have created an algorithm that will help reduce the risk of data loss in ferroelectric memory, which is based on ferroelectrics. They allow storing information in the form of "clusters" of electrons.
This type of memory is characterized by high speed and non-volatility. However, it has a significant drawback — short lifespan. Coercive voltages, necessary for rewriting and deleting data, may change over time. This causes failures when reading data and information is erased.
MIPT has created a mathematical model that can predict how coercive voltages will change depending on various factors. It takes into account the physical properties of ferroelectric materials, their interaction with electrodes, and the influence of temperature.
The researchers tested their development by comparing its results with experimental data obtained on samples made of zirconium and hafnium oxides. The agreement between the calculated and experimental data confirms the effectiveness of the new approach.
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